Development of Single-Crystalline 2D Gate Dielectrics for GAAFET Technologies

This invention introduces a new class of materials designed to improve how next-generation chips manage electrical signals at extremely small scales, particularly those based on Gate-All Around Field-Effect Transistors (GAAFETs). These single-crystalline 2D dielectrics offer high dielectric strength and stability, helping to reduce power loss and signal interference in advanced transistor designs. Examples of suitable dielectric materials for use in this invention include, but are not limited to, lanthanum oxide compounds (LaOX, where X is a halogen), bismuth-based layered oxides (Bi2XO5, where X may include elements such as silicon or other suitable substituents), hexagonal boron nitride (h-BN), and manganese oxide (Mn3O4). These materials offer a range of high dielectric strength, stability, and compatibility with advanced device processing techniques. Unlike conventional materials, these dielectrics maintain their performance as chips become smaller and more complex. This material can be produced over large surfaces and is compatible with both traditional silicon-based platforms and newer materials under exploration in advanced electronics.

Background: 
Modern computer chips rely on thin insulating layers, known as dielectrics, to separate critical regions within transistors and control how current flows through them. For over a decade, materials like hafnium oxide have been used in this role, but they are now reaching their physical and practical limits. These conventional materials tend to perform poorly at the extremely thin levels required for advanced chips, leading to reduced efficiency, higher energy use, and more frequent device failure. This becomes a more serious issue when integrating with new semiconductor materials which are highly sensitive to the properties of their interfaces. This invention addresses this by introducing 2D dielectrics that are crystalline, rather than amorphous. This means they have a consistent atomic structure that allows for more stable performance and fewer defects. They also support thinner insulating layers without increasing leakage or reducing performance, which is a critical requirement for advancing chip design at the sub-2nm scale.

Applications: 

• Logic transistors used in next-generation computing chips
• Gate dielectrics for GAAFET-based semiconductor platforms
• 2D nanosheet transistor systems
• Low-power, high-speed electronics for advanced computing and mobile devices

Advantages: 

• High dielectric constant helps achieve stronger gate control in smaller transistors
• Strong breakdown field reduces failure rates under high voltage operation
• Crystalline atomic structure minimizes defects and improves long-term stability
• Compatible with large-area synthesis methods used in chip manufacturing
• Reduces leakage current and supports further transistor scaling
• Supports thinner insulating layers while maintaining performance