Deeply Subwavelength All-Dielectric Nanophotonics in Silicon

This technology increases the energy output for optoelectronic applications by increasing the energy density in the longitudinal and transverse planes. This increasing of the efficacy of devices such as LIDAR, free-space communications, and optical manipulations. The global market for optoelectronics is growing at a CAGR of 18.3% from 2016 to 2023. The growth in this market is driven from the high demand for bandwidth and current power constraints. This invention would increase power output and bandwidth all while lowering the necessary power needed. 

 

Application                                                                                       Stage of Development 

All-dielectric silicon nanophotonic for                                              Proof of concept prototype 

increased energy density and lower power usage   

 

Advantages 

• All-dielectric design, allowing for significantly lower losses compared to plasmonic approaches

• Increased optical densities, which achieves improved performance with lower energy input

• First-time realization of optical devices achieving the optical confinement and enhanced light-matter interactions

 

Technical Summary 

This technology has two features that enhance the energy densities of optical wavelengths in both the longitudinal and transverse dimensions. The inventors introduce a new pathway for enhancing optical confinement in the longitudinal dimension of a waveguide using “Periodic Spatial Refocusing” (PSR). This unique approach can achieve extreme light confinement and ultra-high energy densities. The transverse dimension achieves higher density using a bridged V-groove waveguide which enhances the signal. When these two methods are combined it is possible to achieve 1000x energy scaling.  

 

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Inventor:                        Dr. Judson Ryckman 

Patent Type:                  Provisional

Serial Number:             62/844,815

CURF Ref No:              2019-022

 

Patent Information: