This invention is a novel magnetic tunnel junction (MTJ) design, which utilizes an antiferromagnetic material in a new configuration to reduce high switching energies in spintronics.
Background: Spintronics represents a promising solution to ever increasing power consumption and heat generation in semiconductor transistors by utilizing both electron spin and charge to store and convey information. Current spintronic technologies may exhibit unacceptably high dynamic power consumption, due to switching energies.
Applications:
Advantages:
Status: issued U.S. patent #11,793,086