Antiferromagnetic Memory Device with Tunneling Magnetoresistance

NU 2021-234

INVENTORS 

• Pedram Khalili Amiri*

SHORT DESCRIPTION
This invention presents an antiferromagnetic memory device that utilizes tunneling magnetoresistance for reading and current-induced methods for writing information, offering enhanced density, speed, and security for spintronic memory applications.

BACKGROUND
Magnetic memory devices have traditionally relied on ferromagnetic materials, which exhibit inherent limitations such as bit-to-bit dipole interactions and susceptibility to external magnetic fields. These constraints hinder the scalability and security of memory devices. Antiferromagnetic (AFM) materials, with their unique magnetic ordering and absence of net magnetization, present a promising alternative. They allow for higher bit density, ultrafast write times, and immunity to magnetic field interference, making them ideal for next-generation memory technologies like MRAM, especially as the industry moves towards advanced silicon nodes and applications in AI and high-performance computing.

ABSTRACT
The antiferromagnetic memory device described here features a heavy metal layer interfaced with an AFM tunnel junction, which includes an AFM material, a tunnel barrier layer, and a capping layer. The device enables information writing through spin-orbit torque by passing current through the heavy metal layer, while reading is achieved using tunneling magnetoresistance effects. This separation of read and write paths enhances cycling endurance and allows for independent optimization of materials for each function. The device's architecture supports ultrahigh-density, ultrafast, and low-power operation, positioning it as a superior alternative to existing ferromagnetic-based memory solutions.

APPLICATIONS

• High-density magnetic random-access memory (MRAM)
• Advanced silicon node memory solutions
• Artificial intelligence (AI) computing
• High-performance computing (HPC)

ADVANTAGES

• Increased bit density without dipole interactions
• Ultrafast write times in the picoseconds range
• Immunity to external magnetic fields
• Enhanced security and reduced need for magnetic shielding
• High room-temperature on/off ratio for reliable readout

PUBLICATIONS

Pedram Khalili Amiri et al. "All-antiferromagnetic electrically controlled memory on silicon featuring large tunneling magnetoresistance", arxiv Applied Physics, 23 Nov 2023

IP STATUS
Issued US Patent 12,185,639