NU 2018-117
INVENTOR
Pedram Khalili Amiri
SHORT DESCRIPTION
A high speed, energy-efficient anti-ferromagnetic voltage-controlled memory device with high density storage capabilities
BACKGROUND
A surge in data mining across industries has propelled a growing demand in developing efficient, cost-effective and reliable high density storage solutions for IoT and cloud computing. Existing market solutions are either too slow (NAND Flash) or too expensive (SRAM, requiring large area/bit or DRAM, with complex processing). Hence, Magnetic memory devices (MRAM) have become industry leaders in this space owing to their non-volatility and high endurance. However, their dependence on ferromagnetic materials compromises reliability in compact devices and use of electric current in writing information, results in heat generation and low writing speeds. Thus there is a critical need for technologies that address these limitations.
ABSTRACT
Northwestern researchers have invented an antiferromagnetic voltage-controlled memory (AVM) device. The value proposition of the invention lies in the utilization of an energy efficient method of writing information into the memory device using a voltage controlled mechanism. Using this principle, the researchers have successfully demonstrated in a prototype, significantly diminished speed of writing in the order of picoseconds, ensuring information storage at high densities and securing reliability. This is a first in class technology, utilizing antiferromagnetic material for memory storage that advances the prospects of device security and performance incrementally, in a scalable device.
APPLICATIONS
ADVANTAGES
PUBLICATIONS
Lopez-Dominguez V, Almasi H and Amiri PK (2019) Picosecond Electric-Field-Induced Switching of Antiferromagnets. Physical Review Applied. 11: 024019.
IP STATUS
Provision and PCT applications have been filed.
Antiferromagnetic voltage-controlled memory device consiting of an AFM layer in proximity to a dielectric film.