10kV-Class Gallium Nitride (GaN) Power Device with Hydrogen Plasma Manufacturing

Gallium Nitride (GaN) is a wide bandgap semiconductor that has gained significant attention in recent years specifically for use in RF and power electronics due to its excellent material properties and better performance compared to traditional silicon (Si) devices. GaN based lateral high electron mobility transistors (HEMTs) are already being used in 5G RF amplifiers, while GaN power HEMTs with voltage ratings up to 900V are being used in power supplies, data centers, as well as fast chargers. AlGaN/GaN HEMT platform allows for integration of components like transistors and diodes on a single chip, which helps reduce unwanted effects such as gate ringing and false turn on from occurring. However, high voltage AlGaN/GaN Schottky barrier diodes (SBDs) require complex fabrication steps which has led to issues regarding the effects of yield, reliability, and cost.

 

Researchers at Arizona State University have developed novel hydrogen plasma guard array termination (H-GAT) structures for high-voltage AlGaN/GaN heterojunction Schottky barrier diodes and methods for manufacturing them. This simple and easy fabrication process uses hydrogen plasma termination which offers a cost-effective solution compared to traditional multi-kV GaN device methods, enabling enhanced scalability and commercialization of high-voltage GaN power electronics.

 

The incorporation of a guard array termination structure significantly improves breakdown voltage (9.5kV), reduces specific on-resistance, lowers capacitance, reduces manufacturing complexity and enables cost-effective production of high-voltage GaN power devices. 

 

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