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Thermal Neutron Transmutation Doped Gallium Oxide Semiconductor Material

Recently, Galium Nitride (GaN) has become the topic of much research in building devices which can replace Silicon (Si) power devices particularly for use in high power high voltage applications with devices like MOSFETs (Metal Oxide Semi-Conductor Field Effect Transistors) and HEMTs, (High Electron Mobility Transistors). Gallium nitride is preferred...

Published: 11/21/2025 | Inventor(s): Noel Guardala

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Category(s): Technology Classifications > Industrial or Consumer Tech > Energy Infrastructure and Environment, Technology Classifications > Industrial or Consumer Tech > Materials