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A Charge Pump Gate Drive for SiC MOSFETs to Reduce Switching Losses
The Problem:Compared to other transistors, silicon carbide (SiC) MOSFETs have improved properties due to lower conduction loss and specific capacitance and higher switching speed and maximum junction temperature. However, high turn-on switching losses due to lower transconductance remains a problem; thus, it is still difficult to implement SiC MOSFETs...
Published: 5/5/2022   |   Inventor(s): Leon Tolbert, Handong Gui
Keywords(s):  
Category(s): Engineering, IAMM