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Carbon Ion Beam Growth of Isotopically-Enriched Graphene and Isotope-Junctions
Isotopically-enriched graphene and isotope junctions are epitaxially grown on a catalyst substrate using a focused carbon ion beam technique. The focused carbon ion beam is filtered to pass substantially a single ion species including a single desired carbon isotope. The ion beam and filtering together provide a means to selectively isotopically-enrich...
Published: 3/12/2024
|
Inventor(s):
J. Warren Beck
,
Delmar Barker
,
William Owens
Keywords(s):
epitaxial
,
graphene
,
ion-beam
,
isotope heterojunction
Category(s):
Technology Classifications > Materials
,
Technology Classifications > Materials > Nanomaterials