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Backside Source Field Plate Method that Uses Via Hole to Better Dissipate Heat
Modification Makes Devices Operate Safely at Higher Voltages with Better ReliabilityDevices fabricated that use this backside source field plate method operate at higher voltages and with better reliability due to the lower peak electric field and junction temperature. Field-effect transistors such as AlGaN/GaN high electron mobility transistors (HEMTs)...
Published: 2/22/2024   |   Inventor(s): Fan Ren, Stephen Pearton, Ya-Hsi Hwang, Mark Law
Keywords(s): backside field plate, field plate, via hole under the active area
Category(s): Technology Classifications > Engineering > Electrical