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Search Results - aniruddh+shekhawat
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Hafnium Oxide Ferroelectric Thin Film for Ferroelectric Random-Access Memory (FeRAM) Manufacturing
Increases Ferroelectricity and Thermal Retention in Complementary Metal-Oxide Semiconductor (CMOS) Applications This hafnium oxide ferroelectric thin film increases ferroelectricity and thermal retention for manufacturing ferroelectric random-access memory (FeRAM). Ferroelectric random-access memory (FeRAM) is a promising emerging technology. It displays...
Published: 10/31/2023
|
Inventor(s):
Toshikazu Nishida
,
Saeed Moghaddam
,
Glen Walters
,
Aniruddh Shekhawat
Keywords(s):
Category(s):
Technology Classifications > Engineering > Mechanical
,
Technology Classifications > Engineering > Computer Science