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A MOS-driver Compatible JFET Structure with Enhanced Gate Source Characteristics
Reference #: 00780 Invention Description: This invention is a modified Junction Field Effect Transistor (JFET) gate structure that allows the gate to be driven by a conventional Metal Oxide Semiconductor Field Effect Transistor (MOSFET) gate driver. Prior-art JFETs have different gating requirements from MOSFETs because of the diode between gate...
Published: 10/18/2023   |   Inventor(s): Enrico Santi, Alexander Grekov, Zhiyang Chen
Keywords(s):  
Category(s): Engineering and Physical Sciences