Improved ReRAM: A New Method for Memory Chip Manufacture

A new method of producing ReRAM chips more suitable for neuromorphic computer systems, AI, and other applications. Background: Chip manufacturers are actively pursuing the development of powerful, next-generation memory chips. One of these emerging technologies is ReRAM (resistive random access memory) which can preserve massive amounts of RAM data on a single chip even in the event of complete power loss. A challenge to the technology is the need for data-storing filaments to form precisely in the thin layers of dielectric oxide that are essential to ReRAM chip functionality. Technology Overview: A new method of producing ReRAM chips developed at SUNY Polytechnic Institute addresses this problem, making ReRAM chips more suitable for neuromorphic computer systems, AI, and other applications.

Key features:
  • Dense non-volatile memory chip with ultra-fast processing times. 
  • Unparalleled read/write reliability.
  • Analog-like output that compliments neuromorphic computer systems.

How it works:
  • Memory cell consists of a metal oxide switching layer sandwiched between two metal electrodes.
  • An electrical charge from the electrodes creates, via oxidation, data-storing filaments in the switching layer.
  • Specially coated electrode contacts and overhanging design of switching layer. allow for greater control of oxidation and properly formed filaments.
Advantages:
  • Standard BEOL processing flow means faster chip production time.
  • Fewer manufacturing steps for increased profitability.
  • Reduced power consumption for end-users.
Intellectual Property Summary: Patent application submitted, WO2020131179A2  Licensing Potential: Development partner, Commercial partner Licensing Status: This technology is available for licensing. https://suny.technologypublisher.com/files/sites/014-18-09istock-178487234.jpg  
Patent Information:
Direct Link:
https://canberra-ip.technologypublisher.com/tech?title=Improved_ReRAM%3a_A_Ne w_Method_for_Memory_Chip_Manufacture
Keywords:
Bookmark this page
For Information, Contact:
Karl-Heinz Schofalvi
The Research Foundation for The State University of New York
Karl-Heinz.Schofalvi@rfsuny.org